Double Self Aligned Bipolar Transistors using Salicide Contacts

A new double self aligned fabrication process for bipolar transistors is presented by applying the self aligned silicide (salicide) process using Pt to poly-Si self aligned devices. Very low sheet resistivities for the external base region and therefore low base resistances are obtained. Temperature stability of the devices for annealing at 700°C for 60 min. is demonstrated. No silicide bridging is observed.