Heterojunction Bipolar Photo-Transistors for High Speed Logic and Communication Applications

We report the results of an experimental study on a GaAs/AlGaAs double heterojunction bipolar transistor structure which can be integrated with fast optical detectors. Results are presented showing that the structure can be fabricated into transistors with f
t
s over 100 GHz, and that the photodetecting structure has a good sensitivity with an incident wavelength of 830 nm.