Scanning of the Entire Energy Gap at the SI-SiO2 Interface in Mosfets using the Conductance Technique: Comparison with Dynamic Transconductance Measurements

A new and accurate approach to ac conductance measurements on MOSFETs is presented. It is shown that the conductance technique can be used to study interface trap properties in the entire silicon band-gap by direct measurement on a single MOSFET. Moreover, the validity of the dynamic transcnductance method is assessed by comparing its results with those obtained from conductance measurements on the same devices.