Carrier Generation and Trapping Properties in SIMOX Structures

New methods and results related to the characterization of silicon on insulator material formed by deep oxygen implantation (SIMOX) are presented. An original and exact analysis allows us to determine both the minority carrier lifetime and the surface recombination velocity by monitoring the transient drain current of depletion mode SIMOX transistors pulsed in deep depletion. In addition, the dynamic transconductance technique, initially proposed for enhancement devices, is adapted to characterize interface properties of depletion mode transistors.