Investigation on P-buried GaAs MESFETs

Alp-buried GaAs MESFET (PB-GaAsMESFET) has been fabricated by means of implanting Be into semi-insultaing GaAs substrates to form a p-type buried layer under the channel-active layer. The experimental results show that PB-GaAs MESFET not only improve the uniformity of the pinch-off voltage but increase the transconductances and reduce the effects of back gate as well. The theoretical analysis and process design of the PB-GaAS MESFET are also presented.