10 Gbit/s on-chip photodetection with self-aligned silicon bipolar transistors

The photoresponse of a standard silicon high - speed self - aligned bipolar transistor was analysed. With a sensitivity of 3.2 A/W it is possible to detect modulated laser light up to data rates of 1.25 Gbit/s and by using the transistor in a photo diode mode data rates up to 10 Gbit/s are obtained.