An Analytical Model for Hot-Carrier-Induced Degradation of Submicron N-MOSFET

This paper presents a generalized version of the MOS charge-sheet model which physically incorporates nonuniform distribution of defects along the channel into the analysis. The model has been applied to study the effect of the localized hot-carrier degradation near the drain on the electrical behavior of a short channel nMOS transistor. A good fitting has been achieved between the experimental data and the simulation.