Diffusion of Boron in Polycrystalline Silicon

The diffusion of boron in polycrystalline silicon films has been studied over the 700-1000°C temperature range for two different grain sizes and doses. Secondary Ion Mass Spectroscopy was used to measure the concentration profiles after ion implantation and after annealing steps. By fitting experimental and simulated profiles we are able to extract for boron both diffusivity in grain boundaries and segregation coefficient between grain boundary and grain.