A Salicided Flash EEPROM for Embedded Memory Applications

Salicide is currently used in sub-half-micron CMOS logic devices, but has not been used till now for Non Volatile Memories, because of reliability concerns. In this paper we report the realisation of a Flash memory cell in a 0.5μm salicided CMOS process. Writing and erasing characteristics are full comparable with non-salicided technology, and preliminary reliability tests have not shown any major problem.