Noise Characteristics of Bipolar Transistors Fabricated in an Advanced Bipolar Technology

The RF noise properties of an advanced silicon bipolar technology are investigated. The influence of the lateral scaling on the noise figure is studied experimentally and compared with the predictions of conventional noise modeling. The potential of the technology is demonstrated by noise figures below 1 dB for frequencies up to 2 GHz and below 2 dB up to 7 GHz.