A New Method for Interface State Evaluation in SOI MOSFETs using Drain Current Transients

A new technique for the extraction of the interface state density in dual-gate SOI MOSFETs is presented. The method is based on the investigation of drain current transients by deep depletion pulsing of MOS transistors, in the weak inversion region. It is shown that this transient technique stands as a reliable monitor for radiation-induced interface traps.