A new method using charge pumping measurements to determine the electrical channel length variation during aging of 0.5μm CMOS transistors

In this work, we present a new method to determine the D
ito
constant, which is involved in a mobility reduction law. From different types of static aging measurements, the channel length variation is calculated, using the correct value of D
ito
. It is thus demonstrated that negative charge trapping tends to reduce the channel length whereas positive charge trapping increases this length.