Thin Film Transistor Fabrication with in-situ Sequential Processing

A multi processing technique has been employed to fabricate thin film transistors with minimal interfacial defects. Polysilicon films with high quality grains for improved filed effect mobility and plasma enhanced silicon nitride for passivation and dielectric purposes have been deposited sequentially without the removal of the substrate from vacuum. TFT's fabricated with a nitride dielectric in a multiprocessing environment are shown to have improved characteristics compared to those produced with a thermal oxide.