Self-Aligned AlGaAs/GaAs HBT Circuits Achieved by CBE Selective Base Contact Regrowth

This paper describes a self-aligned AlGaAs/GaAs heterojunction bipolar transistor technology using selective chemical beam epitaxy. The process is achieved by a selective regrowth of the extrinsic base layer. Digital circuits and laser drivers operating at 10 Gb/s have been successfully demonstrated for the first time with this process.