A 85 Volt High Performance Silicon Complementary Bipolar Technology for High Voltage Analog Applications

A high performance and low cost complementary bipolar technology has been developed for the realization of higlh-precision, hiigh-frequency, and high voltage analog circuits. The technology, referred to as VIP-3H (Vertically Integrated PNP-3H), offers polysilicon emitter transistors with BV
ceo
of NPN and PNP transistors greater than 85 and 95 volts, respectively. The f
t
of the NPN is 2 GHz and for the PNP is 1.6 GHz. In addition, ß × V
a
figures of merit in excess of 60,000 V for NPN and 7,200 for PNP, respectively, are also obtained. The optimization of the critical breakdown voltages is presented and discussed.