Identification of Peripheral Base Currents in (Si or SiGe) Epitaxial-Base Single-Polysilicon Self-Aligned Bipolar Transistors

This paper reports an investigation of non-ideal base currents in epitaxial base (Si or Si
1-x
Ge
x
) bipolar transistors fabricated using a single-polysilicon self-aligned technology. Two independent leakage components are identified. Their spatial and physical origins are used to outline the main critical fabrication steps of this technology.