An analytical model of current-splitting in CMOS-compatible lateral bipolar transistors

The use of CMOS-compatible lateral bipolar transistors in various applications makes it necessary to be able to estimate the splitting of the collector currents by means of an analytical model. In this paper, we present such an analytical 2D-model that was derived using conformal mapping techniques. It allows for the geometry-dependent calculation of vertical and lateral currents including their dependance on collector voltage. The model can be extended to realistic 3D-structures.