Interface Properties of Strained InGaAs/InP Quantum Wells Grown by LP-MOVPE

We have analysed ultrathin (5-10 monolayers) In
1-x
Ga
x
As/InP (0.17 < x > 1) quantum wells grown by low-pressure metal organic vapour phase epitaxy using optical spectroscopy and transmission electron microscopy. We find, for all compositions, evidence for a complex interface structure at both the lower and the upper interface. Both originate from interdiffusion of arsenic and phosphorus at growth time. The influence of the interface structure on the optical transition energies is discussed in detail.