A Systematic Investigation of N-Channel Delta-Doped Mosfets Grown by M.B.E.

The fabrication of a set of delta-doped MOSFETs with a range of gate areas down to 0.8μmx0.8μm is reported. Current-voltage curves have been measured and compared with results predicted by the HFIELDS device model. A transition in the I-V characteristic is identified and attributed to the formation of a parasitic channel immediately below the gate oxide. Good control of the threshold voltage is achieved in devices across the wafer.