GaInAs/GaInAsP SCH-MQW-laser emitting at 1.35 μm grown by LP-MOVPE

In conclusion we have demonstrated that GaInAs/GaInAsP MQW can be grown by LP-MOVPE with abrupt heterointerfaces and a control of the well width within one monolayer. Due to this precise control we obtained very low threshold current densities for GaInAs/GaInAsP-MQW lasers with wells of only 4 monolayer thickness. The best threshold current density of 800 A/cm
²
is obtained for 4 wells separated by 15 nm barriers.