Optical characterization of strained InGaAs/InP quantum well structures

The effects of strain on the optical properties of In
1-x
Ga
x
As/InP multiple-quantum well structures grown by low pressure metal organic vapor phase epitaxy have been investigated by photoluminescence spectroscopy. The investigated composition range is varied between 0.17 < x
Ga
< 1.00. Sputtered neutrals mass spectrometry has been used to calibrate the growth interpolated nominal compositions. Distinct peaks from monolayer variations of well thickness are observed from all samples. The analysis of the PL-spectra leads to the assumption of an intermediate layer of InAs
0.65
P
0.35
at the InP to In
1=x
Ga
x
As (lower) interface.