MIS Àuger Transistor

In 1965 H.Kroemer suggested that the transistor which has a wide band gap emitter may have α >1 because of the impact ionization by injected hot electrons. We realize it for the first time by using MIS-structure with a tunnel-transparent oxide layer (Al-SiO
₂
-n-Si). The injected electrons receive a substantial part of their energy from heating during the passage above the self-consistent quantum well for holes in the silicon part of the transistor. The calculated I-V characteristics of the Auger transistor are in a good agreement with the experimental data.