The Permeable Junction Base Transistor with a new Gate of extremely high doped p++ - GaAs

The Permeable Junction Base Transistor (PJBT) is a new concept of vertical field effect transistor (v-FET) that has the potential of very high frequency operation. The gate of the new homoepitaxial device consists of heavily p-type doped GaAs and is embedded in nominally undoped layers to reduce the gate capacitance. Design and technology are described and preliminary results are presented.