A 1.296-to-5.184Gb/s Transceiver with 2.4mW/(Gb/s) Burst-mode CDR using Dual-Edge Injection-Locked Oscillator

A 1.296-to-5.184 Gb/s transceiver with 2.4 mW/(Gb/s) burst-mode CDR using a dual-edge injection-locked oscillator is fabricated in 40 nm CMOS. The chip operates over a range of 1.296 to 5.184 Gb/s. The proposed CDR locks in less than 20b and features continuous-rate capability, with twice the power efficiency of previously reported continuous-rate burst-mode CDRs.