Lateral carrier domain magnetometer in SOI technology

We report here a lateral magnetometer based on the carrier domain effect. For the ease of integration, silicon-based magnetic sensors are often researched. The Vertical Carrier Domain Magnetometer (VCDM), reported some time ago, achieves a high sensitivity based on carrier domain effects and on internal positive feedback. Unfortunately, the VCDM is not practical. We report here a Lateral Carrier Domain Magnetometer built on SOI that solves the problems faced by the VCDM. MEDICI simulation shows the formation of a carrier domain. We fabricated the device using a 6-mask process on a BESOI wafer. The device is probed on wafer with a specially made magnetic chuck that can generate up to 200 Gauss. The LCDM achieves a relative sensitivity of 12.5%/Tesla.