Electrical characterization of resistive memory in metal-Pr0.7Ca0.3MnO3 interface: A future non-volatile memory device

The phenomenon of electric pulse induced resistive switching in metal (Ag)-oxide (Pr
0.7
Ca
0.3
MnO
3
) interface has been studied in detail. Dielectric spectroscopy (frequency range ∼ 10Hz–10Mz) has been used to investigate the formation of switched interface and underlying mesostructure. Resistance switch has been realized only over a voltage threshold (V
Th
) and a very fast ‘write’ speed (∼100 ns or less) with excellent reversibility has been achieved. Detailed kinetics and relaxation studies are conducted with data retention time period of more than 10
⁸
sec (∼years). Based on the above results, a defect creation/annihilation and lattice rearrangement model for switching has been developed. C-AFM (conductive AFM) has been used to study the nano inhomogeneity of the conductivity of metal-PCMO interface and a more complex percolation model has been outlined.