Growth and characterization of Ni3FeN thin films by reactive gas timing RF magnetron sputtering

Ni
₃
FeN films were deposited on the glass substrate at room temperature by reactive gas timing rf magnetron sputtering, with two conditions: (1) a time period of Ar:N
₂
gas (2) a flow rate of Ar:N
₂
gas. Our results show that sputter rate increase with increasing of a time period and the rate of Ar:N
₂
gas. The crystal structure of thin films was investigated by X-ray diffraction show fcc structure of Ni
₃
FeN (200) plane. The lattice constants increase with increasing of the flow rate of the nitrogen gas but it decrease with increasing of a time period of Ar gas. The grain size of thin films were investigated by atomic force microscope show the size range between 20-120 nm.