nSET: Novel simulation method for single-electron tunnel device with 1-Dimension multiple islands

Single-electronic transistors (SETs) are considered as the attractive candidates for post-CMOS VLSI due to their ultra-small size and low power consumption. Because SETs with single island can not work at room temperature normally, more and more researchers begin to make research on the SETs with 1-dimension multi-islands. A new simulation method-nSET, is introduced in this paper. Compared with other methods, nSET can simulate the SET device with 1-dimension multiple islands with high speed and accuracy. Through the comparison, it can be get that nSET is accurate and fast compared with the classical Monte Carlo (MC) simulator, and is very useful for the ASIC design of SET devices.