Quantum simulations of hole transport in Si, Ge, SiGe and GaAs double-gate pMOSFETs: orientation and strain effects

We have developed a ballistic self-consistent code which couples the six-band k.p Hamiltonian to the Green function formalism. We investigate the influence of channel material (Si, Ge, SiGe and GaAs), crystallographic orientation ([100] and [110]) and strain (biaxial and uniaxial) on the ultimate double-gate pMOSFET performances. The results show that the best configuration is obtained with strained [100]-oriented Si devices.