Phase Change Memory technology for embedded non volatile memory applications for 90nm and beyond

A 90 nm embedded PCM technology is presented. For the first time the storage element has been integrated in a 6-ML advanced CMOS platform, exploiting the LV n-mos device as cell selector. Very good cell working window and intrinsic reliability both for storage element and selector MOS have been proven. The full integration of a 4 Mb ePCM macrocell with very few additional masks and minimal process tuning confirms this technology as a viable solution for floating gate non-volatile memory replacement in embedded applications.