3-terminal nanoelectromechanical switching device in insulating liquid media for low voltage operation and reliability improvement

A nanoelectromechanical (NEM) switching device is developed with a new technique involving a liquid medium. Operation voltage is reduced by about 40% and the number of switching cycles with reliable device performance is improved dramatically, more than 5-fold. The device has a 50 nm thick TiN cantilever with a 40 nm air-gap. A CMOS compatible process is employed.