RTS-like fluctuation in Gate Induced Drain Leakage current of Saddle-Fin type DRAM cell transistor

RTS (random telegraph signal)-like fluctuation in Gate Induced Drain Leakage (GIDL) current of Saddle-Fin (S-Fin) type DRAM cell transistor was investigated for the first time. Furthermore, two types of fluctuation which have apparently different ¿
_high
(average time duration of high leakage state) to ¿
_low
(average time duration of low leakage state) ratio were investigated, and it was found that the energy difference between bistable levels is similar to that of the junction leakage.