Enabling the high-performance InGaAs/Ge CMOS: a common gate stack solution

To address the integration of the high-mobility Ge/III-V MOSFET, a common gate stack (CGS) solution is proposed for the first time and demonstrated on Ge and InGaAs channels with combined hole and electron field-effect mobility values up to 400 cm
²
/eV-s and 1300 cm
²
/eV-s. Based on the duality found on the InGaAs/Ge MOS system, this approach aims to integrate the InGaAs/Ge MOSFET processes for high performance CMOS applications with an emphasis on progressive EOT scaling.