0.9µm pitch pixel CMOS image sensor design methodology

We demonstrate the first ever 0.9µm pitch pixel CMOS image sensor(CIS), and reveal the problems that are likely to be encountered in future device structures. We have developed a set of guidelines for the design of high quantum efficiency(QE) CISs, and verified their validity by comparing the image quality of 0.9, 1.12, 1.4 and 1.75µm CISs. Furthermore, we propose a simple methodology to optimize more complicated submicron pitch CIS structures.