Resolving fast VTH transients after program/erase of flash memory stacks and their relation to electron and hole defects

A new fast technique is developed to investigate the short term post program and erase discharge of flash memory devices with high-k dielectrics. The procedure is based on fast V
_TH
-evaluation methods developed for NBTI and provides the transient characteristics after 20 ms under program or erase conditions. The post program and erase curves provide useful information on the dielectric properties and are used as a fast screening technique for alternative materials.