High gain, high linearity, L-band SiGe low noise amplifier with fully-integrated matching network

This paper presents an L-band silicon-germanium (SiGe) low-noise amplifier (LNA) for use in Global Positioning System (GPS) receivers. Implemented in a 200 GHz SiGe BiCMOS technology, the LNA occupies 1 × 1 mm
²
(including the bondpads). The SiGe LNA exhibits a gain greater than 23 dB from 1.1 to 2.0 GHz, and a noise figure of 2.7 to 3.3 dB from 1.2 to 2.4 GHz. At 1.575 GHz, the 1-dB compression point (P
_1dB
) is 1.73 dBm, with an input third-order intercept point (IIP3) of -3.98 dBm.