A comprehensive study of single-electron effects in multiple-gate MOSFETs

In this paper, an in-depth study of single-electron effects in multiple-gate SOI MOSFETs had been conducted. The impact of quantum mechanical effects on Coulomb blockade oscillations has been investigated. The study indicated that, to enable room-temperature SET applications, raising the gate-dot coupling strength and the access resistance were crucial. The multiple-gate SOI MOSFET with the non-overlapped architecture was an attractive approach for future SETs.