High performance Schottky barrier MOSFETs with workfunction engineering

Various sizes of erbium silicided n-/p-type Schottky barrier MOSFETs are manufactured from 20 um to 7 nm. The manufactured SB-MOSFETs show excellent DIBL and subthreshold swing characteristics due to the existence of Schottky barrier between source and channel. It is found that the control of the Schottky barrier height between silicon and ErSi
_1.7
is the key factor for the increase of drive current. N-type SOI substrate and strained silicon have very low electron Schottky barrier height. The manufactured 20 nm n-/p-type SB-MOSFET showed 550 and 250 uNum saturation current at V
_GS
-V
_T
= V
_DS
= 2 V condition (T
_ox
= 5 nm) with excellent short channel characteristics, which is the highest current level compared with reported data. Also, 10 nm and sub 10 nm SB-MOSFETs characteristics are obtained.