Performance of dual-channel gate-all-around polysilicon nanowire thin-film transistor

In this work, performance of dual-channel GAA poly-Si nanowire TFT with NH
₃
plasma passivation was demonstrated. The proposed devices exhibit low leakage current in off state, a high I
_on
/I
_of
current ratio, a low subthreshold slope, an absence of DIBL and promising output characteristics. It is believed that this high performance poly-Si TFT is suitable for future applications.