High performance silicon-based extreme ultraviolet (EUV) radiation detector for industrial application

Silicon-based p
⁺
n junction photodiodes have been successfully fabricated for radiation detection in the extreme ultraviolet (EUV) spectral range. The diode technology relies on the formation of a front p
⁺
active surface region by using pure boron chemical vapor deposition (CVD), which grows delta-like B-doped layers on Si substrates. Therefore, the technique can ensure defect-free, highly-doped, and extremely ultra shallow junctions that significantly enhance the sensitivity to UV radiation with respect to commercial state-of-the-art detectors, as confirmed by near theoretical responsivity (0.266 A/W, at 13.5 nm radiation wavelength). Outstanding performance has also been achieved in terms of extremely low dark current (< 50 pA, at a reverse bias of 10 V) and pulsed response time (< 100 ns) for 0.1 cm
²
large area devices. In addition, the fabricated photodiodes exhibit negligible degradation to high-dose radiation exposure. Owing to these features, the presented photodiode technology, which profits from low cost, reduced complexity, and full compatibility with standard Si processing, offers a reliable solution for the implementation of detectors in industrial applications based on EUV radiation, such as next-generation 13.5 nm wavelength lithography.