Improved light-trapping effect in a-Si:H / μC-Si:H tandem solar cells by using high haze SnO2:F thin films

In this paper we report on the fabrication of amorphous silicon (a-Si:H)/microcrystalline silicon (μc-Si:H) p-i-n tandem solar cells on high haze fluorine-doped tin oxide (SnO
₂
:F) transparent conductive oxide (TCO) thin films, type-HU. The HU-TCO has double texture morphology on its surface and shows high haze value through the whole optical region where the tandem solar cells are sensitive. We demonstrate here that light-trapping effect is improved by using HU-TCO. HU-TCO provided higher short-circuit current than conventional pyramidal TCO when i-layer thicknesses of a-Si:H and μc- Si:H of tandem solar cell were 0.35 and 1.5 μm, respectively. Quantum efficiency of bottom ¿c-Si:H cell was improved by 1 mA/cm
²
by using HU-TCO.