Debye temperature of II–VI and III–V semiconductors

The Debye temperature (Θ
D
) of II–VI and III–V zincblende semiconductors has been calculated using plasma frequency formalism recently developed for ternary chalcopyrite semiconductors. Four simple relations have been proposed to calculate the values of Θ
D
. Two are based on plasmon energy (ω
p
) data and one each on molecular weight (W) and melting temperature (T
m
).The calculated values of Θ
D
are compared with the experimental values and the values reported by different workers. Reasonably good agreement has been obtained between them.