UV SiC avalanche photodetectors for photon counting

At present, the best detector for photon-counting in the deep UV region of the spectrum is based on photoemissive detectors such as PMTs. However, its disadvantages are low quantum efficiency, sensitivity to magnetic field and high cost. In this work we investigate semiconductor alternatives to PMTs for use for photon counting in the deep UV. Silicon Carbide avalanche photodetectors with separate absorption and multiplication regions were fabricated and characterized. Effect of thicknesses of the multiplication and absorption layers on electrical and optical characteristics were analyzed.