A high linearity SiGe BiCMOS power amplifier for 2.4GHz wireless communications

A high linearity power amplifier (PA) is demonstrated for wireless communications at 2.4 GHz and is implemented in a 0.18 ¿m silicon germanium (SiGe) BiCMOS process. This PA is composed of two stages and achieves a good performance on linearity: when the input power is 0 dBm, the output 1 dB compression point (OP1 dB) is 20.3 dBm, which is only about 0.7 dBm less than the output power. The layout area of this PA is 1.1×1.3 mm
²
.