An analytical current model for lateral gradual doping channel in LDMOS

An analytical surface potential based current model for lateral gradual doping channel in LDMOS (lateral gradual doping MOSFETs) is developed. The position dependent parameters and build in electric field induced by the gradual doping profile are taken into account in derivation of a surface potential equation. Proper approximations are made in integration of the drift-diffusion current. The model is verified by two-dimensional device simulator MEDICI.