Study on Hole Effective Mass of Strained Si1-xGex/(101)Si

Using K.P method with the help of perturbation theory, the arbitrary k wave vector directional hole effective masses in strained Si
1−x
Ge
x
/(101)Si were obtained. It is found that the more obvious anisotropy of the hole effective mass occurs in strained Si
1−x
Ge
x
on (101) Si substrate and that the [010] directional hole effective mass decreases obviously under strain, compared with the one in relaxed Si. The results above can supply valuable references to the design of the Si-based strained PMOS devices