Analysis and design of class E power amplifier employing SiC MESFETs

Silicon carbide (SiC) metal-semiconductor field effect transistors (MESFET) is a perfect choice for designing class-E power amplifiers (PA) due to its high breakdown voltage and low output capacitance. In this paper, a transmission-line class-E PA employing SiC MESFET is designed, and transistor parameters are discussed. The proposed PA has been tested with advanced design system (ADS), the peak power added efficiency (PAE) of 70.5% with drain efficiency of 77.9% and power gain of 10 dB are achieved at operating frequency 2.14 GHz.