Simulated magnetoresistive behavior of geometrically asymmetric spin valves

A semi-analytical micromagnetic model is used to study how the magnetoresistive (MR) response is affected by uneven geometries in NiFe/Cu/NiFe spin-valve devices. Devices with unequal stripe heights and thicknesses of the magnetic layers are studied. The calculated devices are 4 /spl mu/m long pinned by a transverse field of 16 kA/m and have nonmagnetic spacer thicknesses of 4 nm. Stripe heights are varied from 0.5 /spl mu/m to 2 /spl mu/m and magnetic-layer thicknesses from 3 nm to 6 nm. Device responses are analyzed and used to indicate how optimal device geometries may be selected.