Analytical power loss evaluation of 5 level H-Bridge with coupled inductor and series connected H-Bridge for PEBB applications

To realize the power electronics building blocks (PEBB) structural's functional and spatial distribution partitioning, half bidge or H-Bridge converter are commonly used as the basic structure. Complicated converters for PEBB can be achieved by combinations of the basic building blocks. Single phase five level H-Bridge (5L-HB) with coupled inductor and series connected H-Bridge (5L-SCHB) are two important combinations of H-Bridge for PEBB applications. The aim of this paper is to evaluate the power loss of semiconductor devices in the single phase 5L-HB with coupled inductor and 5L-SCHB using analytical method. Conduction loss as well as switching loss are modeled based on semiconductor devices data sheet information, circuit current and voltage waveforms during all operating conditions. The modeling benefits the prediction and further investigation of the power loss distribution in other PEBB applications. The results can be used to justify the most suitable converter topology for PEBB applications according to the loss distribution.