InGaAs LDMOS power semiconductor device performances

An n-channel In
_0.65
Ga
_0.35
As LDMOS with Al
₂
O
₃
as gate dielectric is proposed. Power device parameters such as specific on-resistance, gate charge, and breakdown voltage are examined using two-dimensional device simulation. Comparison between In
_0.65
Ga
_0.35
As Si devices is made. The InGaAs LDMOS shows a 92% improvement in R
_on
× Q
_g
over its silicon counterpart.